super fast recovery diode rfu5tf6s ? series ? dimensions (unit : mm) ? structure ultra fast recovery ? applications general rectification ? features 1)single type.(to-220) 2)ultra high switching speed ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 ? c) symbol v rm v r average rectified forward current io tj tstg ? electrical characteristics (tj=25 ? c) symbol unit forward voltage v f v i r a trr ns thermal resistance(*) rth(j-c) ? c/w (*) : design assurance without measurement. storage temperature ? 55 to ? 150 ? c a one cycle peak value, tj=25 ? c junction temperature 150 ? c forward current surge peak i fsm 60hz half sin wave, non-repetitive 60 60hz half sin wave, resistance load, tc=93 ? c 5.0 a reverse voltage direct voltage 600 v repetitive peak reverse voltage duty ? 0.5 600 v parameter conditions limits unit junction to case -- 4 10 reverse recovery time (*) i f =0.5a,i r =1a,irr=0.25i r -15 25 reverse current v r =600v - 0.02 max. i f =5.0a - 2.2 2.8 parameter conditions min. typ. (1) (3) +0.3 ?0.1 +0.4 ?0.2 +0.1 ?0.05 +0.2 ?0.1 +0.3 ?0.1 1/3 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rfu5tf6s ? electrical characteristic curves 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 rth(j-c) 10 100 1000 1 10 100 time i fsm 0 5 10 15 20 25 30 ave : 14.3ns t =25 ? c i f =0.5a i r =1a irr=0.25i r n=10pcs 0 50 100 150 200 ave : 93.0a 8.3ms i fsm 1cyc 0.1 1 10 100 0 1000 2000 3000 4000 5000 1 10 100 forward voltage : v f (mv) v f -i f characteristics forward current : i f (a) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals : ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals : ct(pf) ct dispersion map i fsm disresion map its ability of peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics transient thaermal impedance : rth ( ? c/w) trr dispersion map reverse recovery time : trr(ns) 1 10 100 1000 10000 100000 0 50 100 150 200 250 300 350 tj=125 ? c tj=25 ? c tj=150 ? c tj=75 ? c 10 100 1000 0 5 10 15 20 25 30 f=1mhz tj=25 ? c 100 110 120 130 140 150 ave : 133.8pf ta=25 ? c f=1mhz v r =0v n=10pcs t =25 ? c v r =600v n=20pcs ave : 28.0na 2000 2100 2200 2300 2400 2500 ave : 2132mv t =25 ? c i f =5a n=20pcs 1 10 100 1000 1 10 100 8.3ms i fsm 1cyc. 8.3ms electrostatic discharge test esd(kv) esd dispersion map 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 c=200pf r=0 ? ave : 2.73kv c=100pf r=1.5k ? ave : 1.14kv tj=125 ? c tj=25 ? c tj=150 ? c tj=75 ? c 2/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rfu5tf6s 0 1 2 3 4 5 6 7 8 9 0 30 60 90 120 150 d.c. d = 0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation : pf(w) average rectified forward current : io(a) io-pf characteristics average rectified forward current : io(a) case temparature : tc( ? c) derating curve"(io-tc) t tj=150 ? c d=t/t t v r io v r =480v 0a 0v 0 5 10 15 20 25 0369 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 3/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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